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IVWorks’ reGaN technology enables first 742GHz GaN HEMT

29 d ago

IVWorks' reGaN technology has enabled the world's first gallium nitride (GaN) high-electron-mobility transistor (HEMT) with a maximum oscillation frequency (fmax) exceeding 700 GHz. The 45 nm gate-length device, developed by professor Dae-hyun Kim's team at Kyungpook National University (South Korea), achieved a record fmax of 742 GHz and an average frequency metric (favg) of 497 GHz—the highest ever reported for any GaN transistor technology. The results were unveiled on 18 June 2026 at the 2026 IEEE/JSAP Symposium on VLSI Technology & Circuits in Honolulu, Hawaii, USA. While indium phosphide (InP) transistors have long dominated sub-terahertz frequencies due to superior electron transport, their low breakdown voltage limits power output and scalability. GaN offers high breakdown field, high power density, and thermal robustness, making it attractive for next-generation high-frequency, high-power applications. However, achieving ultra-high-frequency performance with GaN has been challenging. To overcome this, the research team used an advanced 45 nm gate process and optimized device architecture. A key enabler was IVWorks' proprietary reGaN selective regrowth technology, which selectively grows heavily doped n-type GaN in source and drain regions, drastically reducing contact resistance. IVWorks demonstrated excellent process uniformity across 4-inch wafers and achieved a regrowth interface resistance (Rint) of 0.027 Ω-mm, approaching the theoretical limit. "This research pushes the RF performance limits of GaN HEMTs to a new level," said professor Kim, highlighting the industry–academia collaboration. IVWorks' CEO Young-kyun Noh noted that reGaN has already passed quality qualification at a major foundry and is in volume production. The achievement positions GaN for emerging sub-terahertz and terahertz applications, including 6G communications, advanced radar, satellite communications, and defense electronics.